DE Associate Director, Ganesh Balakrishnan

Bio: Ganesh Balakrishnan, PhD, is a Professor and Regents’ Lecturer in the Department of Electrical and Computer Engineering at the University of New Mexico. He is also the Director of New Mexico EPSCoR and its SMART Grid Center. His area of expertise is in the development of semiconductor electronic and optoelectronic devices and semiconductor crystal growth using molecular beam epitaxy (MBE). He has significant expertise in the growth of high-power semiconductor lasers such as photonic crystal surface emitting lasers. He has two decades of experience in the development of antimonide based metamorphic buffers on GaAs and silicon substrates. He was a Co-PI of the NSF QESST ERC and was involved in the development of high efficiency III-V solar cells. In the past ten years he has received funding in the excess of $12 million for his group and $30 million for center grants from agencies that include NSF, DoE, AFOSR, AFRL, ARO, DTRA and NNSA. He has approximately 120 peer reviewed journal publications and around 140 conference presentations.